SKU:94905332163
Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 ohm.cm
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 1 0. 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Orientation: (100) +/-0
High-profile silicon O-Rings (2 pcs) can withstand temperatures up to 250°C
Micro-Fiber & Dust Free Wiper
and the total time is not more than 6553s
It will make the furnace movable
T-Piece with Male 1/8 NPT & Female 1/8 BSPP Fitting Connector 4 EQ-KF16-1/8BSPP 1/8 BSPP Male to KF-16 Extension Adapter 5 EQ-3Bvalve-1/8BSPP SS Three-Way Ball Valve
Polishing: Two sides polished
Made in USA Density > 3
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5 torrs before filling inert gas
Easy battery insertion and removal
Orientation: (100)
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Your Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 ohm.cm orders ship within 1-2 business days.
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