Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

It can tolerate polarization of higher voltages (up to 5

0% Yittrium stablized ZrO2)

The zero diffraction plate is made of single-crystal Silicon which is cut at the special angle

Surface finish (RMS or Ra) :            Ra< 25A

Cu coated Si Wafer ( 10x5 mm size )

Description:

3nm(by AFM)

and bottom pressing die) 1 set 3 Black Rubber Rings O

Surface finish (RMS or Ra) :    Ra< 25A

Net Weight 11

Gel Sticky Boxes

Optional Syringe Pump