SKU:97743112178
Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, 1 SP,Sb-doped ,R:0.1-0.5 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, 1 SP,Sb-doped ,R:0.1-0.5 ohm.cmSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) + 0. 7 degree Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
1 A - 3 A with the cut-off current of 6 mA
The probe module is shown in Pic
500ml Agate Jar
and lower expansion at high temperature
ES1U-CNoz is a set of Co-axial Nozzle with Dual Inlets
and use Oven to dry serval hours
4 mm thickness and 0
5pt solid windowtext
52- 56 x103
then connect it to vacuum pump or gas recovery system
%) in an ultrasound bath for 5 min in order to remove the surface oxide layer
)): 109 - 1011
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