SKU:31793297458
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,GaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 10X10 x 0. 55 mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: 4120 5860 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Weight: 87
Dimension: 17
Whole set pressing die includes Double layer structure 120mm dry pressing die
Meter Type Variable Area Scale 2" Scale Valve Stainless Steel Valve Temperature Limit 103 F Pressure Limit 100 PSI Connection Size 8th inch Accuracy 4% Low Range Cubic Centimeters per Minute 100 CCM High Range Cubic Centimeters per Minute 1000 CCM
No warranty for the tube
Working Temperature: < 50°C
These valves are not recommended for use below 1
Crystal Substrate A-Z
A fume hood to enclose the system for safety and health (Click Pic 6 to order)
Surface roughness: RMS or Ra:~ 10 A(By AFM)
800ºC and Max
Orientation: <111> +/-2deg
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