SKU:73217278969
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP
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- USA
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: single side polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4470 6540 cm^2 V. S Resistivity: (0. 96 5. 34) x 10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Edge orientation is available at a extra cost upon request
Working Space
Ball mill and sieve the powder and apply only the 32~75 microns powder to the pressing die to avoid the damages
Do NOT use any crucible to carry the sample
8mm Nickel Tab with hot melt tape as Negative Terminal for Polymer Li-ion Battery -- 50pcs/Box
Film:UNCD (Ultrananocrystalline Diamond)
After refilling the glove box with high purity Argon gas (5N purity)
Doping: Un- Doped
Polished: Two sides polished
& B type TCs
constant current charge
1mm Weight 2
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