SKU:84101269655
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 spGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 4" dia x 0. 55 mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 55 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: 4120 5860 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
Orientaion: A plane (11-20)ori
5N/15mm wide at 200 x 0
Wafer Containers
or it may lose connection from the battery analyzer
2 side polished
must do Grounding tests(GFCI) before first-time use
Length 40 meter Coating Width ~ 140 or 239 mm Total Width 180 or 280 mm Film Thickness ~1 um on each side The cylinder I
constant voltage (CV)
Application Notes The Alumina Jar comes with a stainless steel jacket
Four jar holders and clamps can accommodate jar sizes up to 107mm O
5") Detailed dimension drawing Max
Length: 350mm
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