SKU:57595645829
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (3. 8 6. 4) x 10^16 cm^3 Mobility: (3450 4150) cm^2 V. S Resistivity: (2. 74 4. 24) E 2 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Polish: One side optical polished
MET Certification is available upon request at extra cost
Surface finish: one side polished
Air dry at room temperature for 2 hours then final cure at 200 for 2 hours before placing in operation
Assume Gauge Displayed Pressure Value is 100
Made of high-strength alloy with a stainless steel protective jacket
Ar environment compatible
76 Array (Capacity): 6*6 =36
5P3O12 Conductive Ceramic is a key enabling component for Li-ion Metal Air Batteries
Doping: Ga Doped
Precision humidity analyzer Trace Oxygen Analyzer (0
06 @ 0 oC 25
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