SKU:70356921669
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2spGaAs single crystal wafer Growing Method: Orientation: (110) Flat: PF<110> SF <100> Size: 5x5x5. 5 5. 6mm Polishing: Two sides polished Doping: un doped Conductor type: S I Mobility: 4800 cm^2 V. S Resistivity :(1 9)x10^17 ohm. cm Carrier Concentration: 1. 3x10^7 cm^ 3 EPD: 1x10^4 cm^ 2 Ra(Average Roughness) : < 5 Angstrom (RMS) Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Working Space 80 mm Dia
You might order a round cutting die kit to cut coin cell electrodes and separator by click the picture below
SiC blade is very brittle
Specifications Material The case and cap are made of Nickel-plated A3 steel
please contact us for a distributor price
Coating width: 120 mm
1mm or less in diameter (colored) Molding Depth < 8
please click the picture below for a detailed size
Surface Polishing: one side epi polished
Application Notes The Alumina Jar comes with a stainless steel jacket
Material Safety Data Sheet
Resistivity: >40 Ohms/cm (If you would like to measure the resistivity accurately
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