SKU:7192705537

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x5 x0.5 mm, 2SP

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Regular price $57.44 USD
Regular price $79.44 USD Sale price $57.44 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x5 x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x5 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

ID:      20 mm

004mm)  (Inside)     (Melting Point:  ~660ºC)

A copy of MS Excel must be installed in order to export data

Application Notes It can be used as a jig for compressing pressure adjustable split test cell

Product options Product size: 80 - 200 mesh according to operating time

Drawing Black Rubber ring for MTI-CIP Series

Tube Furnaces ( 1-7 zone)

4 mm (+/-0

(60mm to 1'')

Film target thickness:       11 um  with  (thickness acceptation range) +/- 10%

Please keep the thermal gradient less than 100oC/cm to avoid cracking

375" (1000 mm) Max

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Exchange/Return Notes
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