SKU:7192705537
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x5 x0.5 mm, 2SP
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x5 x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x5 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
ID: 20 mm
004mm) (Inside) (Melting Point: ~660ºC)
A copy of MS Excel must be installed in order to export data
Application Notes It can be used as a jig for compressing pressure adjustable split test cell
Product options Product size: 80 - 200 mesh according to operating time
Drawing Black Rubber ring for MTI-CIP Series
Tube Furnaces ( 1-7 zone)
4 mm (+/-0
(60mm to 1'')
Film target thickness: 11 um with (thickness acceptation range) +/- 10%
Please keep the thermal gradient less than 100oC/cm to avoid cracking
375" (1000 mm) Max
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