Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50

Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50Specifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z

Vacuum Pen SMT-150C (NEW) -

Peak of fluorescence spectra (nm)

Mobility:                                (3450-4150) cm^2/V

Volume Density: 5 ~ 5

Tungsten coil heater with the S type thermocouple is inserted to the bottom of alumina crucible for precise temperature measurement and control

Y:   20 mm +/- 0

polymer Li-Ion battery made by heated sealer               make pouch cell

Density:                19

5"thickness (900 x 600 x 60 mm

Wafer Size:                    5 x 5 x0

40"x 25"x30"

low-voltage