Ge Single Crystal Substrate, N-type Sb-doped (100) 5x5x 0.45mm 1sp, R<0.009ohm.cm

Ge Single Crystal Substrate, N-type Sb-doped (100) 5x5x 0.45mm 1sp, R<0.009ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 45 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: <0. 009 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal

Mohn hardness

vacuum or inert gas)

Length 47 1/4" (1200 mm) Detailed dimension drawing

Thermo expans 10-6/K

For the properties of Corning Willow Glass

Polished:                Two sides polished

We only sell small quantities to research for developing new materials

After refilling the glove box with high purity Argon gas (5N purity)

Double-wall stainless steel construction provides durability and safely stores corrosive the chemicals and less leaking rate

40 Metric Tons Bottom Hydraulic Cylinder Travel Distance 0 - 16 mm Top Support Screw Adjustable Height 170 mm Hydraulic Cylinder Diameter 80 mm Max

1 sides polished

You may add two rectangular aluminum plates ( W 55mm x L 60 mm) to press a pouch cell