SKU:88597874702

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

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Regular price $40.19 USD
Regular price $79.19 USD Sale price $40.19 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5 x 5 x 0. 35 mm Polishing: one side polished Doping: Te doped Conductor type: N type Carrier Concentration: (3. 04 5. 98) x 10^17 cm^3 Mobility: (3330 3850) cm^2 V. S Resistivity: (3. 14 5. 34) E 3 ohm cm EPD: < 5000 cm^2 Note: EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

MTI diamond blade is hot pressed and sintered by full diamond powder which provides five times longer service life than that of regular edge sintered diamond blades

Optional Devices

If a power failure occurs during testing

Specifications Related Data Aluminum nitride (AlN)

For coating 5-micron thin coating

For calculating the actual pressure applied to your working piece

made of 304 or 316 stainless steel with sealing o-ring

Certificates:

the nano-fibers are winded in the form of an aligned nonwoven membrane on a rotating drum

1 Optional Parts Option Oil-less Vacuum Pump

Part Number EQ-AL0605 Arbor Dia 0

5% at 120 Celcius degrees / 1 H

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