SKU:88597874702
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5 x 5 x 0. 35 mm Polishing: one side polished Doping: Te doped Conductor type: N type Carrier Concentration: (3. 04 5. 98) x 10^17 cm^3 Mobility: (3330 3850) cm^2 V. S Resistivity: (3. 14 5. 34) E 3 ohm cm EPD: < 5000 cm^2 Note: EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
MTI diamond blade is hot pressed and sintered by full diamond powder which provides five times longer service life than that of regular edge sintered diamond blades
Optional Devices
If a power failure occurs during testing
Specifications Related Data Aluminum nitride (AlN)
For coating 5-micron thin coating
For calculating the actual pressure applied to your working piece
made of 304 or 316 stainless steel with sealing o-ring
Certificates:
the nano-fibers are winded in the form of an aligned nonwoven membrane on a rotating drum
1 Optional Parts Option Oil-less Vacuum Pump
Part Number EQ-AL0605 Arbor Dia 0
5% at 120 Celcius degrees / 1 H
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