SKU:20969012715
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 0007 0. 005 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Load: 150 metric Ton (at room temperature)
Locking Screws: Stainless Steel Qty in package 4 set of bushing and locking screws
Replacement fitting for M6 Screws
) x 86mm (H)
28mm in Aluminum Tab with Adhesive Polymer Tape Max
Porosity rate: 7
Digital Vacuum Gauges and Flow Meters
Warranty One-year limited warranty with lifetime support
consisting of equal numbers of boron and nitrogen atoms
The die is designed for our >30T Pressing machine
Capable for KSL-1700X-A4 furnace
Lib-PCC23140 is an aluminum prismatic cell case designed for 23140 EV battery
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