SKU:91943237218
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 0007 0. 002 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
6mm thickness
such as EC400 Dicing
Resistivity: >106 ohm-cm
Thermal Conductivity: 640
One end is 1/8" NPT Male fitting
non-metals
DEmo Video How to make cylindral cell
0mm Electrical Insulating Good Hot Sealing Coniditon 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years Laminate Strength Nylon/Al more than 2N/15mm Al/CPP more than 5N/15mm Heat Seal Strength More than 22
By closing the vacuum flange
34) x 10^8 ohm
Package: 100 g per lot sealed in Plastic bag
5 - 5V programmable
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