SKU:63828459752
Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 3 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
94mm Flatness = 0
Thermal Expansion: 7
Working plate:
Optional You may order a pre-formed pouch cell case and other accessories by click the picture below right
Non- effective area: 3
please follow the equation below:
Weight Case: 45
the glove box moisture can be kept below 180 ppm and oxygen below 200 ppm
In order to get a high density of the sample
MTI changed the software for better operation
The manual pump can be replaced by the electric pump which has programmable pressure control to use inside glovebox( Feedthrough for manual pump is not available )
Packing: In vacuum bag
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Your Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm orders ship within 1-2 business days.
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- Express: 1-2 business days
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