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SKU:92522165549
Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,
SPECIFICATIONS
(Compressed air source not included)
Flow Rate: CFM: 780
The EQ-FCT-LD Electrolyte Tank System with Jig and Tube Connectors provides a convenient "Plug-In" connection & setup for testing the EQ-VRB-C-LD Redox Flow Cell
Density: 5
Panel cutout:
Two adjustable positions limit sensors to control the fixture movement distance
Orientation tolerance: +/-0
Sapphire substrate is the popular substrates for III-V nitrides
Resistivity
Wafer Size: 5 x 5 x0
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's
Easy Shipping
Quick Dispatch:
Your Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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