SKU:92522165549

Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm

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Regular price $102.35 USD
Regular price $145.35 USD Sale price $102.35 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,

SPECIFICATIONS

(Compressed air source not included)

Flow Rate:           CFM: 780

The EQ-FCT-LD Electrolyte Tank System with Jig and Tube Connectors provides a convenient "Plug-In" connection & setup for testing the EQ-VRB-C-LD Redox Flow Cell

Density:                            5

Panel cutout:

Two adjustable positions limit sensors to control the fixture movement distance

Orientation tolerance:  +/-0

Sapphire substrate is the popular substrates for III-V nitrides

Resistivity

Wafer Size:                    5 x 5 x0

Precaution: R plane sapphire wafer is easy to cleave compared with C plane's

Easy Shipping

Quick Dispatch:

Your Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm orders ship within 1-2 business days.

Delivery Options:

  • Standard: 3-7 business days
  • Fast: 2-3 business days
  • Express: 1-2 business days

Order Tracking:

You'll receive a tracking link by email once your Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm ships.

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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