SKU:66603867600
Ge Substrate (110) 5x5x 0.5 mm, 1 SP, N-type ,Undoped R>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate (110) 5x5x 0.5 mm, 1 SP, N-type ,Undoped R>50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Working temperature: 1700°C (in air) Max
Heating Loss
1 mm thick
Customized dies with Max
~131mm with C coated
core die made of hardened steel and highly polished with hardness HRC 60 - 62
and then long press to decrease the value
R plane -- (1-102) orientation sapphire wafer is being used as a superconductor substrate due to less mis-matched lattice and stable chemical and physical properties
Crystal: BaF2 Crystal
Adhesive (Polyester-polyurethane): 4-5g/m2
Load 2 metric Ton (at room Temperature)
click pic to see demo video) Vacuum Pump
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