SKU:74741364613
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal
Fabrication Method: Electrodeposition of Silver on Nickel Foam Substrate
Polishing: one side polished
Thickness: 430um +/- 25 um
The temperature controller is optional
Orientation: M Plane
One O-ring with:
500W DC evaporation power supply with max
It can prevent the precision and brittle crystal wafer from damage and contamination during shipping and storing
Die Sleeve Height: 50mm
automotive
Size: 2" dia x 2
6mm T Surface Density 130±10g/ 130±10g/ Porosity
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