Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005

Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005Specifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

The standard cell tray is W 148mm

Vacuum gauge and valves Two vacuum flanges are included for the glove box to achieve vacuum to remove moisture and oxygen without expensive inert gas purging

Fabrication Method: Electrodeposition of Silver on Nickel Foam Substrate

Used for 50Ah Li-ion batteries

MTI corporation provides the high quality quartz blocks for high temperature tubing furnaces

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6% Theoretical Coverage

Optional:    Rotating heater with speed (0 - 5 RPM) is available upon request at extra cost

Package:  Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

8% (C101) [Note: The 25 um copper foils is single-side shiny]

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