SKU:57067036873
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,2sp, R:40 ohm.cm
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,2sp, R:40 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns ( + 10 microm) Surface Polishing: Two sides epi polished Surface roughness: <30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >40 ohm. cmOhms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties:
Semi-Insulating
Stay clear of the syringe needle or drum collector during the process to avoid electric shock
5kg 280mm 220m 2
Drum Collector Rotation speed: 100 - 8000 rpm adjustable
D Mullite Tube is made in the USA with 60% Al2O3 +38% SiO2 material
This aluminum foil (16 +/- 2um) is used as substrate (Al current collectors) for coating cathode materials in Li-Ion rechargeable battery research
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
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Resistivity
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