Ge Substrate: (100) 10x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

Ge Substrate: (100) 10x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer

Sintering the pellet under suitable temperature

Application Notes Replace tube for MTI multi-zone tube furnaces of SWGL-1700Z2 Dual Zone

Replacement fitting for M6 Screws

One end is 1/4'' O

sunlight and oxygen aging

The magnetic fluid sealed inline swivel prevents gas/vacuum / electrical lines twisting in the event of the KF50 flange rotation

It is the preferred sealing material for the refrigeration industry because of its resistance to ammonia and Freon®

Polishing:                          Double sides  polished

Resistivity:                     1-5 Ohms/cm (If you would like to measure the resistivity accurately

If the power failure occurs during testing

Suggest to use laser ablation method to make thin film due to complicated composition

For using our automatic coater