SKU:63077836320
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.
Surface roughness: RMS or Ra:~ 10 A(By AFM)
corrosion resistance
x 110mm Height (pressing die cavity)
Epitaxial thin Film Composition
Moisture Content (um)
Thin Film Thickness System Thin Film Thickness / Deposition System
Orientation: (100)+/-2
Compatible Hydraulic Press
One bolded sub-mini connector (female) is installed on the other end for a quick plug-in connection to the thermocouple
Purity > 99
Applications
Easy to clean and maintain
Easy Shipping
Quick Dispatch:
Your Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
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