SKU:63077836320

Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm

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Regular price $390.43 USD
Regular price $432.43 USD Sale price $390.43 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

Surface roughness:         RMS or Ra:~ 10 A(By AFM)

corrosion resistance

x 110mm Height (pressing die cavity)

Epitaxial thin Film Composition

Moisture Content (um)

Thin Film Thickness System  Thin Film Thickness / Deposition System

Orientation:                     (100)+/-2

Compatible Hydraulic Press

One bolded sub-mini connector (female) is installed on the other end for a quick plug-in connection to the thermocouple

Purity > 99

Applications

Easy to clean and maintain

Easy Shipping

Quick Dispatch:

Your Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm orders ship within 1-2 business days.

Delivery Options:

  • Standard: 3-7 business days
  • Fast: 2-3 business days
  • Express: 1-2 business days

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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