SKU:5114217711

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm

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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer

polymer battery with tabs VIDEO on how to weld the tab VIDEO on how to seal the battery w/ tab

Transmission wavelength

1) with one 10 mm SS milling ball

MeltingPoint               585 oC

758 Angstroms c=12

Outlet connections are 1/4" NPT

5mm(ID) x 68mm(H)

The wafer container is packed in 1000 class clean room and plastic bag (20 containers per bag)

It can be removed the NiO by annealing in the hydrogen furnace

2 for the Coin Cell Disc Cutter MSK-T-07 since January 2013

Doped with Fe

MSK-T-07 is a compact precision disc cutter with 4 sets of cutting die ( 15

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