SKU:13176605861

Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm

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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) + 0. 7 degree Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

CE certificated only

Case Height: 100mm

APS:              30 nm

Specifications Materials  Case and cap are made of Nickel plated A3 steel

1/4 BSPP or M14  to KF-16 port

Used to Indicate & Manually control Air or Gas flow 800 - 8000 cc/min

Channels and Prismatic Cell Size

35mm thickness x 12

Pressure controller

Model Number EQ-Die-12D-316 Max

It is an ideal fume-hood for the material research lab to handle flammable or corrosive gasses

Density:                2

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