SKU:13176605861
Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) + 0. 7 degree Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
CE certificated only
Case Height: 100mm
APS: 30 nm
Specifications Materials Case and cap are made of Nickel plated A3 steel
1/4 BSPP or M14 to KF-16 port
Used to Indicate & Manually control Air or Gas flow 800 - 8000 cc/min
Channels and Prismatic Cell Size
35mm thickness x 12
Pressure controller
Model Number EQ-Die-12D-316 Max
It is an ideal fume-hood for the material research lab to handle flammable or corrosive gasses
Density: 2
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