Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: >40 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal

Syringe needle holder to mount up to 7 needles (7 slots of 12 mm Dia

Mobility: (4120-5860) cm^2/V

Boiling Point:         2467°C

it can be used inside a glovebox without oil leaks risky

The position can be adjusted by three micrometers

Operating Temperature 1200ºC Application Notes Please load sample directly into the quartz tube

Ag (silver) Coated Nickel Foam as three-dimensional conductive electrode substrates  (100 mm length x 100mm width x 1

Sealed in Vacuum in a plastic box and bag

Dielectric constants

Assume Diameter of your Die is 4 cm

Package:                    1000 class   clean plastic bag

m one each side or 50