SKU:11767942199
Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100)+ 2. 5 Degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal
Not suggested for cutting hard materials such as metal
Load: 150 metric Ton (at room temperature)
the ceramic tube can be inserted into the tube with a vacuum-sealed on the flange
working temperature 1700 °C (3092°F) Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500°C
Y: 20 mm +/- 0
Please click the picture below to choose dry pressing die
0mA – 3000mA
Part Number CBN0403
Mobility: 4890--6180 cm^2/V
Elongation Rate (RT): 4
5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3
Ag(Silver) Single Crystal Substrate
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