SKU:35559525715
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer
Thickness: 12 um
and report immediately to carrier/MTI
Array (Capacity): 4*4=16
EQ-Lib-CGnP Graphene is a conductive material when preparing a Li-ion battery
4 mm x 0
Please click here to download SDS
33 mm) Inside Diameter 0
Pressing Die Installation Schematic / Instruction
need the experience to install
Porosity: 70~80%
You may add two rectangular aluminum plates ( W 55mm x L 60 mm) to press a pouch cell
and plasticity as well as good conductivity and adhesion under high temperatures
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