SKU:35559525715

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

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Regular price $28.69 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer

Thickness:         12 um

and report immediately to carrier/MTI

Array (Capacity):     4*4=16

EQ-Lib-CGnP Graphene is a conductive material when preparing a Li-ion battery

4 mm  x 0

Please click here to download SDS

33 mm) Inside Diameter 0

Pressing Die Installation Schematic / Instruction

need the experience to install

Porosity: 70~80%

You may add two rectangular aluminum plates ( W 55mm x L 60 mm) to press a pouch cell

and plasticity as well as good conductivity and adhesion under high temperatures

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