SKU:99555789702
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 4" dia x 0. 55 mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 88 1. 98)E8 ohm. cm Carrier Concentration: N A Mobility: 4940 5060 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
): 109 - 1011
and a host of other operations
Conductor type: Semi-insulating
For the Data of BOROFLOAT® Borosilicate Float Glass
please click the pictures to the left to order
Surface finish (RMS or Ra) : Ra< 25A
wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition
KF-25 quick clamp is included
Application Notes Please click here to learn how to use and maintain an Alumina tube in MTI high-temperature tube furnace
2mm)x100 mm (+/-0
with 1/4NPT - EQ-FM-1000CC-LD
crystal purity: >99
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