SKU:52663757863
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x3 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Boron nitride is a chemical compound with the chemical formula BN
the PTFE flange set can be melted if the furnace temperature gets higher than 500°C
(1-102) R-plane orientation +/-0
font-size:10
One grain boundary is formed under high temperature and pressure
Hydraulic Pressure in Chamber 300 Mpa ( 43500 PSI) Hydraulic Machine optional
Polished: two sides polished optional
Click the picture below to see
Outlet Dia
Application Notes New buyers must buy the software installed laptop to avoid trouble from installation
Add Alcohol to prevent bubble and aging for 4-8 hours 5
Resistivity: > 50 Ohms/cm
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