SKU:52663757863

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP

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Regular price $52.84 USD
Regular price $82.84 USD Sale price $52.84 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x3 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Boron nitride is a chemical compound with the chemical formula BN

the PTFE flange set can be melted if the furnace temperature gets higher than 500°C

(1-102) R-plane orientation +/-0

font-size:10

One grain boundary  is formed under high temperature and pressure

Hydraulic Pressure in Chamber 300 Mpa ( 43500 PSI)  Hydraulic Machine optional

Polished:      two  sides  polished optional

Click the picture below to see

Outlet Dia

Application Notes  New buyers must buy the software installed laptop to avoid trouble from installation

Add Alcohol to prevent bubble and aging  for 4-8 hours 5

Resistivity:                     > 50 Ohms/cm

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Exchange/Return Notes
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