Ge Substrate (100)+/-2.5 degree 5x 5x0.5 mm, 1 SP, Undoped, N-type, R: >50 ohm.cm

Ge Substrate (100)+/-2.5 degree 5x 5x0.5 mm, 1 SP, Undoped, N-type, R: >50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (100)+ 2. 5 Degree Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z

Doping:                              undoped

Instruction                     Cautions Please must always wear protection goggles during operation

Resistivities: >10^10 ohm-cm

CdSe single crystal CdSe single crystal

Resistivity:                     1-5 Ohms/cm  (If you would like to measure the resistivity accurately

Surface finish (RMS or Ra) : < 20A

Material: Cold-Rolling Copper

It is designed for precise compressing small pellets Ø1/4") in glovebox for ceramics and solid-state battery

Ball mill and sieve the powder and apply only the 32~75 micron powder to the pressing die to avoid the damages

Note: These empty cylindrical cells are pre-clamped with the cap only and WITHOUT Cathode and Anode

2mm High purity YSZ milling balls (99

leave enough room to operate inside the fume hood