SKU:72303854178
Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.4mm 1sp,R>50 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.4mm 1sp,R>50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 4 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z
25 " Blade Dia 8" Thickness 0
Features CF40 (2
Note Q: What are the differences between SS304 and SS316 stainless steel
Anode: Anode Powder+Conductive Graphite+PVDF+NMP (or SBR+CMC)
Orientation: (100)+/- 0
Mobility: 4500 cm 2/ V
Ionic Conductivity
Monoclinic
<1500°C under vacuum Heating and Cooling Rate <10°C/min at T<1200°C
Packing: in film supported box
Orientaion: M plane <10-10>orn +/-0
Single crystal CdTe Substrate
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