GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp

GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 5X5 x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: (4120 5860) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

0 mm +/- 0

Made of high quality PTFE materials for minimizing electrolyte corrosion and allowing easy clean ups for repeated use

It is excellent to make High Tc syperconduct SQUID

YLJ-40T is a 40T manual hydraulic pressing machine with a separable pump for easy maintenance

This tool is manually operated and is designed for cutting round discs from battery electrodes or separator film (<30um)

TYPE:                                      NH20-480*510-30

It is widely used as X-ray and gama-ray detectors

Pt Coated Button Cell Case

Two pushing rods highly polished and perfectly fitted into die

and any low-speed saw

Do not use this die set for pressing powder with a particle size of 30 microns or smaller

low-voltage