SKU:35842926017
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Size = 50
Vacuum gauge and valves Two vacuum flanges are included for the glove box to achieve vacuum to remove moisture and oxygen without expensive inert gas purging
Sintering the pellet under a suitable temperature in Oven
Specification Material Aluminum 99
A series of tube connectors provide easy and fast connection to the flow cell and the tank lids are designed to release the build up of by-product gases during charging & discharging in order to prevent electrolyte leakage
please click the picture in below for details:
D: 1
True density: 2
Wafer size: 10 mm x 10 mm x 0
Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
Coating thickness: 5
For anti-corrosion and high-temperature lubricant
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