SKU:14448593104
Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z
H: 98-207 mm
MsoTableGrid {mso-style-name:"Table Grid"
Weight 160g Type Scraper for Screen Printing Coater EQ-SPC-1-LD Dimension
Optional (Not Included) This nozzle works with below Electrospinning System - MSK-NFES-3
wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition
Conductor type: P-type
30o Bi-LSAT Substrate Specifications
For the Optical Transmission spectrum
75" ID and 1" OD) installed
Compliance CE Certified Warranty One year limited with lifetime support
8mm Width Aluminum Tab with Adhesive Polymer Tap as Positive Terminal for Pouch Cell
350 Pa Features & Structure
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Exchange/Return Notes
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