SKU:12474586711
GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,
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- USA
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,GaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 10X10 x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: (4120 5860) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
HVMSS-SPC-1-LD
It is the user’s responsibility to understand the risks associated with the process and use proper protection
Size: 10x10x0
C plane orientation
Polishing: single side polished
The press with rectangular plates (70x58mm) is available upon request at an extra cost
OVERALL TRAY SIZE:
X-ray diffraction patterl
In case service is needed for the laptops
Please consider to have Seals metal threads to prevents leakage for MTI Flange (MTI-SEAL-MT)
Orientation: <111> +/-1
Calibration Certificate by MTI is available at extra cost
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