SKU:64090565149
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: Double sides polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4890 6180 cm^2 V. S Resistivity: (0. 76 4. 40)x10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
It is important to bury the tungsten coil to prevent heat dissipation
Digital control panel
Compact Direct Read Flow Meter
24o Bi-LSAT Substrate Specifications
Application Notes Replace tube for MTI multi-zone tube furnaces of SWGL-1700Z2 Dual Zone
} Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
014" thickness x 1/2" arbor)
current are built-in
Heating element: Fe-Cr-Al Alloy doped by M
please select the features in the optional bar)
The MSK-SFM-TR-2K is a programmable tube roller with a timer setting
350 Pa Features & Structure
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Exchange/Return Notes
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