SKU:86709261080

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP

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Regular price $67.85 USD
Regular price $97.85 USD Sale price $67.85 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 6mm Polishing: one side polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 1. 1)E8 Ohm. cm Mobility: 5870 6120 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Optional Devices

Please always keep nanopowder in vacuum chamber or glove box to avoid aggregation (click picture below-right to order)

Change in Current: Upto 10mA

Various optional jars and balls are listed below

Color:              dark brown

Ar environment compatible

4 Connections Red Light Rocker Switch for old model DZF

Application

Net weight: 5

~50 Torr after 5 min pumping

DO NOT USE stainless steel balls in Alumina jars

Nitrile / NBR: Nitrile (Buna-N) is the most widely used elastomer due to its excellent resistance to petroleum products

Easy Shipping

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Your GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP orders ship within 1-2 business days.

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  • Fast: 2-3 business days
  • Express: 1-2 business days

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy