SKU:22458116006

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm

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Regular price $45.94 USD
Regular price $80.94 USD Sale price $45.94 USD
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21

Description

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal

- Soft type heat-sealing blade (Blade with rubber

Over-temperature protection and alarm allow for operation without attendant(s)

Length 61mm Width 4mm Thickness 0

which allows the use of some electric devices inside the vacuum chamber

Digital Humidity & Temperature Monitor

General Properties

5mm(ID) x 49mm(H)

Operation Video

4-Pin Electrical Feedthrough with KF-25 Clamp is used to transferred electrical currents and signals into DZF Oven in a vacuum

- 160-180C for lower blade

Such a great feature is available upon request at an extra cost  ( add $195 )

Film target thickness:       4

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Exchange/Return Notes
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