SKU:22458116006
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal
- Soft type heat-sealing blade (Blade with rubber
Over-temperature protection and alarm allow for operation without attendant(s)
Length 61mm Width 4mm Thickness 0
which allows the use of some electric devices inside the vacuum chamber
Digital Humidity & Temperature Monitor
General Properties
5mm(ID) x 49mm(H)
Operation Video
4-Pin Electrical Feedthrough with KF-25 Clamp is used to transferred electrical currents and signals into DZF Oven in a vacuum
- 160-180C for lower blade
Such a great feature is available upon request at an extra cost ( add $195 )
Film target thickness: 4
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