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SKU:48494710310
Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
High pressure copper gasket for high vacuum sealing of High Pressure Tube Furnace with Super-alloy Tube up to 1100C @ 700PSI- OTF1200X-HP-55
Please store moisture-sensitive consumables in the vacuum storage box
mm ( open frame )
5) mm x (2-2
2500 ~ 3500
Weight 9
Major Flat Length: 16mm +/- 1mm
Orientaion: A plane <11-20> orn
Working Voltage
Resistivity: 0
EQ-MJ-13-100C is a 100ml Corundum Jar for bench-top milling machines
Polished: 2 sides polished
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