SKU:37379792761
Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cmSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
(Please order separately under Personalization)
Surface Quality: 60/40
0 mm thickness
10 pieces of Kapton film
(Material in bracket)
200&450 Mesh to separate the 32~75 microns particles from the powder clumps
coated with epoxy and the graduations are on both sides of the indicating tube
Application Notes Gas flow-in/out rate can largely affect system pressure control accuracy
Interlock protection is included to cut the power if the lid is open during the crushing process
1 3/8" high and 1-1/8" deep
Note: Please store moisture sensitive consumables in vacuum storage box
Application Notes You may consider using EQ-BNMR for easy mold release
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Exchange/Return Notes
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