SKU:49542937798
Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
This jig features a built-in retaining mechanism that prevents the loss of compression force on the split cell
Please click to view Construction and Testing of Coin Cells of Lithium-Ion Batteries using MTI CR2032 Coin Cell Cases ( Published online 2012 Aug 2
SCR Temperature Controller
To build a DIY electrospinning system
Conductivity @800: >0
Temperature Control
Overall Width: 1
font-family:"Times New Roman"
Lib-PCC50160 is an aluminum prismatic cell case designed for 50160 EV battery
Fixed Carbon (%)
Doping: Undoped
Aluminum Nitride Substrates: AlN
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