SKU:49542937798

Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20

Description

Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

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Overall Width: 1

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Fixed Carbon (%)

Doping:                              Undoped

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