SKU:35421622317
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal
Resistivity: <0
4 3/8" diameter
(@ 1mil DFT) 345 ft²/gal Recommended Curing:
12 @ 100 oC
One KFD25 Adaptor is built in the chamber ( click picture left to see ) for connecting to the vacuum pump
and drum rotation speed
Purity: >99
Wafer Size: 10x5x0
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's
Polished surface: Two side epi polished by special CMP technology
Lib-PCC26148 is an aluminum prismatic cell case designed for 26148 EV battery
Resistivity: > 40 Ohms/cm (If you would like to measure the resistivity accurately
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