Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

Each complete set includes: container

- 3 seconds heating time

Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A

Length: 60mm ±1

and not covered by warranty

Quartz tubes are designed for using under vacuum and low pressure < 0

The best crimper: MSK-PN110-S Compact Gas Driven for consistent result Pic1

please read these instructions carefully before installation and before using it for the first time

The wafer container is packed in 1000 class clean room and plastic bag (20 containers per bag)

Max sample height: <100mm

Orientation:     (111) +/-0

8mm Width Aluminum Tab with Adhesive Polymer Tap as Positive Terminal for Pouch Cell