SKU:84164423052
Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 4 0. 5 mm Surface Polishing: two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Growing Method: CZ
True density: ~5
Click the video below to see the battery anode coated
Furnace Structure
Option Other sizes of coin cells
-Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side
BK7- glass substrates
Constant Current Discharging
Travel distance: 20mm
4mm (D) x 4
made of stainless steel ( SS304) with PP sealing O-ring
Constant Power Charging
Quick Dispatch:
Your Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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