SKU:1988146975
Ge Substrate (110) 10x10x 0.5 mm, 1 SP, N-type Undoped, R>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Ge Substrate (110) 10x10x 0.5 mm, 1 SP, N-type Undoped, R>50 ohm.cmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohm. cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
02 g/cm3
Whole set pressing die includes Double layer structure 120mm dry pressing die
Tungsten coil heater and alumina crucible for high-temperature evaporation up to 1300 ºC
Pocket Size(mil): L130*W130*D30 Pocket Size(mm): L3
Resistivities: >10^10 ohm-cm
Warranty One year limited warranty with lifetime support
Minimum Current interval: 12 mA
Conductor type: N-type
you should firstly groove it by MSK-500 and then crimp it by MSK-510 with CR123 die
Cycle number
which allows the glove box to vacuum the chamber to remove moisture and oxygen without expensive inert gas purging
Edge orietation Indication: <001> +/-0
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