SKU:86682479688
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Operating current at 10 A < 8 seconds
You may add a die weight plat via double side tape on the top the applicator to make it stable
Used to Indicate & Manually control Air or Gas flow Max 5000 cc/min
Appearance: White Powder
Thickness: 430um+/-15 um
Aluminum Oxide Substrates Al2O3
This is a pair of air tight sealing flanges made of polyfluortetraethylene (PTFE) for 80 mm diameter processing tube
Two Power Plugs are installed on the hood
Surface Roughness: < 50 microns
Material hardness must be lower than Mohs 8
- 160-180C for lower blade
The case and spring shown in the picture are not included
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